The Effect OfIonizing Radiation On The Components

18/04/2017

  • Radiation-induced failures in microelectronics pose a growing concern in the aerospace and avionic communities. Incident radiation acting on these devices is mainly due to cosmic rays and their secondary particles produced in the Earth atmosphere. Energetic particles induce various device malfunctions via their interaction with materials in electronic devices. Due to the high integration level in modern devices this has become now an issue for all commercial applications, also at ground level. The aim of this course is to introduce the natural radiation environments and their impact on electronic devices. After a brief introduction, the radiation environments will be presented for space and atmospheric applications (avionic and ground level). Then, the effects of radiation on matter will be discussed in detail, which will reveal the fact that the generation of electron-hole pairs is the predominant phenomenon in radiation-induced device malfunctions. Different radiation-induced effects in microelectronics will be discussed. As an example, we will focus on soft errors induced in atmospheric environment. We will present the principles of Monte Carlo simulation tools, which are very useful to establish the transient current shapes and to evaluate the soft error rates. These kinds of estimation tools can be validated experimentally thanks to accelerated tests under beam and/or accelerated test in natural environment (i.e. in high altitude).
  • Radiation induced failure in microelectronics
    1.  General overview of radiation induced failure in microelectronics
    2.  Useful definitions
    3.  Main effects vs main applications
    4.  Radiations in Space and their effects on Electronics
    5.  Fundamental on Radiation-Matter Interaction
    6.  Non-destructive single events
    7.  Single event upset at transistor and SRAM cell levels
    8.  Impact of Natural Radioactivity on the Soft Error Rate
    9.  Displacement Damages
    10.  Total ionising dose
  • Radiation effects modeling
    • I Introduction
      • II Modeling of a MOS capacitor in 1D
      •  A Effect of bias in stationary modeling
        1. Definition of the device geometry
        2. Definition of the physical model
        3. Definition of stimuli
        4. Perform the calculations
        5. Visualization of results
      •   B Effect of ionizing radiation
        1. Model of trapping-detrapping used by ECORCE.
        2. Definition of the basic model
        3. Bias effect
        4. Function Yield effect
        5. Time Dependent Effect
        6. Enhanced Low Dose Rate Sensitivity
        7. emperature effect
        8. Thermal regeneration
        9. Bias effect on the regeneration
        10.   Effect of the bias sign on the regeneration